收藏本站
Si7462DP
Vishay Siliconix
N-Channel 200-V (D-S) MOSFET
PRODUCT SUMMARY
FEATURES
V DS (V)
200
R DS(on) ( Ω )
0.130 at V GS = 10 V
0.142 at V GS = 6.0 V
I D (A)
4.1
3.9
? Halogen-free According to IEC 61249-2-21
Available
? TrenchFET ? Power MOSFETs
? New Low Thermal Resistance PowerPAK ?
Package with Low 1.07 mm Profile
? PWM Optimized For Fast Switching
PowerPAK SO-8
APPLICATIONS
? Primary Side Switch
6.15 mm
1
S
S
5.15 mm
2
S
3
4
G
D
D
8
7
D
D
6
5
D
G
Bottom View
S
Ordering Information: Si7462DP-T1-E3 (Lead (Pb)-free)
Si7462DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
N-Channel MOSFET
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
V DS
V GS
10 s
Steady State
200
± 20
Unit
V
Continuous Drain Current (T J = 150 °C) a
Pulsed Drain Current
Avalanche Current
Single Avalanche Energy (Duty Cycle ≤ 1 %)
T A = 25 °C
T A = 85 °C
L = 0.1 mH
I D
I DM
I AS
E AS
4.1
3.0
12
6
1.8
2.6
1.9
A
mJ
Continuous Source Current (Diode Conduction) a
I S
4.0
1.6
Maximum Power Dissipation a
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) b,c
T A = 25 °C
T A = 85 °C
P D
T J , T stg
4.8
2.6
- 55 to 150
260
1.9
1.0
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient a
Maximum Junction-to-Case (Drain)
t ≤ 10 s
Steady State
Steady State
R thJA
R thJC
21
55
1.7
26
65
2.1
°C/W
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See Solder Profile ( www.vishay.com/ppg?73257 ). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 72136
S09-0227-Rev. C, 09-Feb-09
www.vishay.com
1
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
SI7465DP-T1-GE3 MOSFET P-CH 60V 3.2A PPAK 8SOIC
SI7530DP-T1-GE3 MOSFET N/P-CH 60V PWRPAK 8-SOIC
SI7620DN-T1-GE3 MOSFET N-CH 150V 13A 1212-8
SI7625DN-T1-GE3 MOSFET P-CH D-S 30V 1212-8 PPAK
SI7629DN-T1-GE3 MOSFET P-CH 20V 1212-8 PPAK
SI7634BDP-T1-E3 MOSFET N-CH D-S 30V PPAK 8SOIC
SI7636DP-T1-GE3 MOSFET N-CH D-S 30V PPAK 8SOIC
SI7655DN-T1-GE3 MOSFET P-CH 20V D-S PPAK 1212
相关代理商/技术参数
SI7463ADP-T1-GE3 制造商:Vishay Semiconductors 功能描述:MOSFETS - Tape and Reel 制造商:Vishay Intertechnologies 功能描述: 制造商:Vishay Siliconix 功能描述:FET P-CH 40V 16.6A PPAK 8SOIC 制造商:Vishay Intertechnologies 功能描述:DUAL P-CHANNEL 20-V (D-S) MOSFET 制造商:Vishay Intertechnologies 功能描述:MOSFET
SI7463DP 制造商:Vishay Siliconix 功能描述:MOSFET P POWERPAK
SI7463DP-T1 制造商:Vishay Siliconix 功能描述:TRANS MOSFET P-CH 40V 11A 8PIN PWRPAK SO - Tape and Reel
SI7463DP-T1-E3 功能描述:MOSFET 40V 18.6A 5.4W 9.2mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI7463DP-T1-GE3 功能描述:MOSFET 40V 18.6A 5.4W 9.2mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI7463DP-T1-GE3 制造商:Vishay Siliconix 功能描述:P CHANNEL MOSFET, -40V, 18.6A, SOIC
SI7464DP 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 6-V (D-S) Fast Switching MOSFET
SI7464DP_06 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 6-V (D-S) Fast Switching MOSFET